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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.117 >

SiO2光導波路とGaAs受光素子の分布結合方式における光結合長の解析 : 光・電子集積回路におけるO/E変換部の検討

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41829

Title: SiO2光導波路とGaAs受光素子の分布結合方式における光結合長の解析 : 光・電子集積回路におけるO/E変換部の検討
Other Titles: Analysis of Coupling Length for Distributed Coupling between SiO2 optical waveguides and GaAs photodetectors : A Study of O/E Interface in Optoelectronic Integrated Circuits
Authors: 松尾, 望1 Browse this author
大野, 英男2 Browse this author
長谷川, 英機3 Browse this author
Authors(alt): Matsuo, Nozomu1
Ohno, Hideo2
Hasegawa, Hideki3
Issue Date: 31-Jan-1984
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 117
Start Page: 39
End Page: 48
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41829
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.117

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