SiO2光導波路とGaAs受光素子の分布結合方式における光結合長の解析 : 光・電子集積回路におけるO/E変換部の検討


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41829

Title:	SiO2光導波路とGaAs受光素子の分布結合方式における光結合長の解析 : 光・電子集積回路におけるO/E変換部の検討
Other Titles:	Analysis of Coupling Length for Distributed Coupling between SiO2 optical waveguides and GaAs photodetectors : A Study of O/E Interface in Optoelectronic Integrated Circuits
Authors:	松尾, 望¹ Browse this author
	大野, 英男² Browse this author
	長谷川, 英機³ Browse this author
Authors(alt):	Matsuo, Nozomu¹
	Ohno, Hideo²
	Hasegawa, Hideki³
Issue Date:	31-Jan-1984
Publisher:	北海道大学
Journal Title:	北海道大學工學部研究報告
Journal Title(alt):	Bulletin of the Faculty of Engineering, Hokkaido University
Volume:	117
Start Page:	39
End Page:	48
Type:	bulletin (article)
URI:	http://hdl.handle.net/2115/41829
Appears in Collections:	北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.117

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