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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.137 >

半絶縁性GaAs基板の絶縁破壊機構に関する検討

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42058

Title: 半絶縁性GaAs基板の絶縁破壊機構に関する検討
Other Titles: Investigation of Breakdown Mechanism of Semi-Insulating GaAs
Authors: 劉, 亜莉1 Browse this author
長谷川, 英機2 Browse this author
大野, 英男3 Browse this author
Authors(alt): Liu, Yali1
Hasegawa, Hideki2
Ohno, Hideo3
Issue Date: 31-Oct-1987
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 137
Start Page: 65
End Page: 71
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42058
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.137

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