半絶縁性GaAs基板の絶縁破壊機構に関する検討


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42058

Title:	半絶縁性GaAs基板の絶縁破壊機構に関する検討
Other Titles:	Investigation of Breakdown Mechanism of Semi-Insulating GaAs
Authors:	劉, 亜莉¹ Browse this author
	長谷川, 英機² Browse this author
	大野, 英男³ Browse this author
Authors(alt):	Liu, Yali¹
	Hasegawa, Hideki²
	Ohno, Hideo³
Issue Date:	31-Oct-1987
Publisher:	北海道大学
Journal Title:	北海道大學工學部研究報告
Journal Title(alt):	Bulletin of the Faculty of Engineering, Hokkaido University
Volume:	137
Start Page:	65
End Page:	71
Type:	bulletin (article)
URI:	http://hdl.handle.net/2115/42058
Appears in Collections:	北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.137

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