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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.140 >

「非晶質シリコン薄膜トランジスタのドレイン電流ドリフト特性とその機構」

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42098

Title: 「非晶質シリコン薄膜トランジスタのドレイン電流ドリフト特性とその機構」
Other Titles: Characterization and Mechanism of Drain Current Drift in Hydrogenated Amorphous Silicon Thin Film Transistor
Authors: 横山, 勇治1 Browse this author
大野, 英男2 Browse this author →KAKEN DB
長谷川, 英機3 Browse this author →KAKEN DB
下妻, 光夫4 Browse this author →KAKEN DB
Authors(alt): Yokoyama, Yuji1
Ohno, Hideo2
Hasegawa, Hideki3
Shimozuma, Mitsuo4
Issue Date: 30-May-1988
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 140
Start Page: 109
End Page: 120
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42098
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.140

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