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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.150 >
MOVPE法によるInAsの原子層エピタキシと成長機構
| Title: | MOVPE法によるInAsの原子層エピタキシと成長機構 |
| Other Titles: | Atomic Layer Epitaxy of InAs by MOVPE and Growth Mechanism |
| Authors: | 松原, 義徳1 Browse this author | | 後藤, 修2 Browse this author | | 大塚, 俊介3 Browse this author | | 長谷川, 英機4 Browse this author | | 大野, 英男5 Browse this author |
| Authors(alt): | Matsubara, Yoshinori1 | | Goto, Shu2 | | Ohtsuka, Shunsuke3 | | Hasegawa, Hideki4 | | Ohno, Hideo5 |
| Issue Date: | 31-May-1990 |
| Publisher: | 北海道大学 |
| Journal Title: | 北海道大學工學部研究報告 |
| Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
| Volume: | 150 |
| Start Page: | 81 |
| End Page: | 89 |
| Type: | bulletin (article) |
| URI: | http://hdl.handle.net/2115/42226 |
| Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.150
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