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Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
| Title: | Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions |
| Authors: | Ishikawa, Takayuki1 Browse this author | | Liu, Hong-xi2 Browse this author | | Taira, Tomoyuki3 Browse this author | | Matsuda, Ken-ichi4 Browse this author →KAKEN DB | | Uemura, Tetsuya5 Browse this author →KAKEN DB | | Yamamoto, Masafumi6 Browse this author →KAKEN DB |
| Authors(alt): | 石川, 貴之1 | | 刘, 宏喜2 | | 平, 智幸3 | | 松田, 健一4 | | 植村, 哲也5 | | 山本, 眞史6 |
| Keywords: | antisite defects | | cobalt alloys | | electrodes | | epitaxial layers | | Fermi level | | ferromagnetic materials | | magnesium compounds | | manganese alloys | | silicon alloys | | tunnelling magnetoresistance |
| Issue Date: | 7-Dec-2009 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 95 |
| Issue: | 23 |
| Start Page: | 232512 |
| Publisher DOI: | 10.1063/1.3272926 |
| Abstract: | Fully epitaxial Co2MnSi (CMS)/MgO/CMS magnetic tunnel junctions (MTJs) with various values of Mn composition α in Co2MnαSi electrodes were fabricated and the influence of α on the tunnel magnetoresistance (TMR) characteristics of these MTJs was investigated. MTJs with Mn-rich CMS electrodes showed TMR ratios, up to 1135% at 4.2 K and 236% at room temperature for α = 1.29, exceeding those of MTJs with CMS electrodes having an almost stoichiometric composition. A possible origin of the higher TMR ratios for α beyond 1.0 is a decreased density of gap states existing around the Fermi level in the half-metal gap caused by the suppression of Co_[Mn] antisites, where a Mn site is replaced by a Co atom, for Mn-rich CMS electrodes. |
| Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 95, 232512 (2009) and may be found at https://dx.doi.org/10.1063/1.3272926 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/42485 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 山本 眞史
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