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Preparation of Eu-doped β- and 15R-SiAlONs by ammonia nitridation of the precursor obtained using aluminum glycine gel
| Title: | Preparation of Eu-doped β- and 15R-SiAlONs by ammonia nitridation of the precursor obtained using aluminum glycine gel |
| Authors: | Masubuchi, Yuji Browse this author →KAKEN DB | | Yoshikawa, Mitsue Browse this author | | Takeda, Takashi Browse this author | | Kikkawa, Shinichi Browse this author |
| Keywords: | Nitride materials | | Chemical synthesis | | Luminescence | | X-ray diffraction |
| Issue Date: | 13-Nov-2009 |
| Publisher: | Elsevier B.V. |
| Journal Title: | Journal of Alloys and Compounds |
| Volume: | 487 |
| Issue: | 1-2 |
| Start Page: | 409 |
| End Page: | 412 |
| Publisher DOI: | 10.1016/j.jallcom.2009.07.151 |
| Abstract: | Synthesis of Eu-doped β- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an α-Si3N4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of β-SiAlON was observed in the product at 1750℃ for Si/Al = 1/1 with small amounts of both α- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of β-SiAlON. The former and latter emissions were assigned to Eu^[2+] in the 15R- and α-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with α-Al2O3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO3)_[3]·9H2O in a 2/1 atomic ratio as the aluminum source. It showed a bluish-white emission at 450 nm under 254 nm radiation. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/42489 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 鱒渕 友治
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