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Effects of breathing and oblong mode phonons on transport properties in a single-electron transistor

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Title: Effects of breathing and oblong mode phonons on transport properties in a single-electron transistor
Authors: Nishiguchi, Norihiko Browse this author
Wybourne, Martin N. Browse this author
Keywords: electron-phonon interaction
phonons in a nanoparticle
single electron tunneling
single electron device
Issue Date: 17-Feb-2010
Publisher: IOP Publishing
Journal Title: Journal of Physics : Condensed Matter
Volume: 22
Issue: 6
Start Page: 065301
Publisher DOI: 10.1088/0953-8984/22/6/065301
PMID: 21389365
Abstract: We investigate theoretically the transport characteristics of a single electron transistor affected by the dynamic deformation of the device configuration due to phonons. By considering changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor, we formulate the electron-phonon interaction peculiar to the device and derive its transport properties by means of the master equation. For a single electron transistor with a gold nano particle island of radius 1 nm, we demonstrate the contribution to the transport properties that originates from tunneling channels associated with THz phonon emission and absorption.
Rights: This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics : Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 西口 規彦

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