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Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network

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Title: Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network
Authors: Kasai, Seiya Browse this author
Miura, Kensuke Browse this author
Shiratori, Yuta Browse this author
Keywords: field effect transistor circuits
gallium arsenide
III-V semiconductors
nanowires
semiconductor quantum wires
stochastic processes
summing circuits
Issue Date: 10-May-2010
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 96
Issue: 19
Start Page: 194102
Publisher DOI: 10.1063/1.3428784
Abstract: Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network's response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 194102 (2010) and may be found at https://dx.doi.org/10.1063/1.3428784
Type: article
URI: http://hdl.handle.net/2115/43100
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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