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Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network

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タイトル: Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network
著者: Kasai, Seiya 著作を一覧する
Miura, Kensuke 著作を一覧する
Shiratori, Yuta 著作を一覧する
キーワード: field effect transistor circuits
gallium arsenide
III-V semiconductors
semiconductor quantum wires
stochastic processes
summing circuits
発行日: 2010年 5月10日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 96
号: 19
開始ページ: 194102
出版社 DOI: 10.1063/1.3428784
抄録: Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network's response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 194102 (2010) and may be found at
資料タイプ: article
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 葛西 誠也


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