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Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network
| Title: | Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network |
| Authors: | Kasai, Seiya Browse this author | | Miura, Kensuke Browse this author | | Shiratori, Yuta Browse this author |
| Keywords: | field effect transistor circuits | | gallium arsenide | | III-V semiconductors | | nanowires | | semiconductor quantum wires | | stochastic processes | | summing circuits |
| Issue Date: | 10-May-2010 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 96 |
| Issue: | 19 |
| Start Page: | 194102 |
| Publisher DOI: | 10.1063/1.3428784 |
| Abstract: | Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network's response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process. |
| Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 194102 (2010) and may be found at https://dx.doi.org/10.1063/1.3428784 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/43100 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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