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High magnetic field effect in organic light emitting diodes

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Title: High magnetic field effect in organic light emitting diodes
Authors: Goto, Yuichiro Browse this author
Noguchi, Takuya Browse this author
Takeuchi, Utahito Browse this author
Hatabayashi, Kunitada Browse this author
Hirose, Yasushi Browse this author
Uchida, Takayuki Browse this author
Sasaki, Takehiko Browse this author
Hasegawa, Tetsuya Browse this author
Shimada, Toshihiro Browse this author →KAKEN DB
Keywords: Organic light emitting diode
Magnetic field
Minority carrier
Issue Date: Jul-2010
Publisher: Elsevier B.V.
Journal Title: Organic Electronics
Volume: 11
Issue: 7
Start Page: 1212
End Page: 1216
Publisher DOI: 10.1016/j.orgel.2010.04.020
Abstract: Fluorescent and phosphorescent organic light emitting diodes (OLEDs) were measured in high magnetic field up to 9 T. The current efficiency steeply increased below 100 mT as reported but gradually decreased when the field was larger. In the range of 0.1-6.5 T, the decrease was proportional to the square of the magnetic field, whereas in the range between 6.5 T and 9 T, it was proportional to the square root of the magnetic field. In contrast, phosphorescent OLED did not show magnetic field dependence. Unipolar devices of n-type Alq3 (tris-(8-hydroxyquinolino) aluminum) and p-type α-NPD (N',N'-Di(naphthalene-1-yl)-N,N'-dipheyl-benzidine) showed positive linear magnetoresistance only for minority carriers. The mechanism of the quadratic dependence of the electroluminescent intensity is discussed based on the experimental results.
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 島田 敏宏

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