Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/44033

Title:	Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3
Authors:	Kiyono, Hajime Browse this author
	Sakai, Toshiki Browse this author
	Takahashi, Mari Browse this author
	Shimada, Shiro Browse this author
Keywords:	Growth models
	Growth from vapor
	Nitrides
Issue Date:	15-Sep-2010
Publisher:	Elsevier B.V.
Journal Title:	Journal of Crystal Growth
Volume:	312
Issue:	19
Start Page:	2823
End Page:	2827
Publisher DOI:	10.1016/j.jcrysgro.2010.06.021
Abstract:	Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650℃, followed by decomposition of GaN at ∼1100℃. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800-1000℃. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface, and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g).
Type:	article (author version)
URI:	http://hdl.handle.net/2115/44033
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 清野肇

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