Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions

Uemura, Tetsuya; Harada, Masanobu; Akiho, Takafumi; Matsuda, Ken-ichi; Yamamoto, Masafumi

doi:10.1063/1.3561759


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Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions

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Title:	Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions
Authors:	Uemura, Tetsuya Browse this author
	Harada, Masanobu Browse this author
	Akiho, Takafumi Browse this author
	Matsuda, Ken-ichi Browse this author
	Yamamoto, Masafumi Browse this author
Issue Date:	7-Mar-2011
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	98
Issue:	10
Start Page:	102503
Publisher DOI:	10.1063/1.3561759
Abstract:	An epitaxial Co50Fe50 layer was grown on As-terminated or Ga-terminated GaAs, and the influence of the termination species on both uniaxial-type tunneling anisotropic magnetoresistance (TAMR) characteristics and magnetocrystalline anisotropy was investigated. The magnetocrystalline anisotropy induced in the Co50Fe50 thin film was strongly dependent on the termination species of the GaAs surface, while the TAMR characteristics were almost unchanged. These experimental findings suggest that the TAMR effect is due to the anisotropy of electronic structure rather than the structural anisotropy.
Rights:	Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 102503 (2011) and may be found at https://dx.doi.org/10.1063/1.3561759
Type:	article
URI:	http://hdl.handle.net/2115/45102
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植村哲也

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