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Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy

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Title: Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy
Authors: Lu, X. M. Browse this author
Izumi, Y. Browse this author
Koyama, M. Browse this author
Nakata, Y. Browse this author
Adachi, S. Browse this author
Muto, S. Browse this author
Keywords: Reflection high-energy electron diffraction
Atomic force microscopy
Quantum dots
Molecular beam epitaxy
Semiconducting III-V materials
Issue Date: 1-May-2011
Publisher: Elsevier B.V.
Journal Title: Journal of Crystal Growth
Volume: 322
Issue: 1
Start Page: 6
End Page: 9
Publisher DOI: 10.1016/j.jcrysgro.2011.02.034
Abstract: The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied, with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and size were found to be quite similar to those of InAs QDs on GaAs. The effect of coverage, however, was different. Although the density was relatively high as compared to that of InAs QDs, it was reduced to 1 x 10^[10] cm^[-2] under an optimized condition. This density is compatible with single QD spectroscopy with the help of a certain nanofabrication technique for areal restriction.
Type: article (author version)
URI: http://hdl.handle.net/2115/45603
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 武藤 俊一

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