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I-V measurement of NiO nanoregion during observation by transmission electron microscopy

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Title: I-V measurement of NiO nanoregion during observation by transmission electron microscopy
Authors: Fujii, Takashi Browse this author
Arita, Masashi Browse this author →KAKEN DB
Hamada, Kouichi Browse this author
Kondo, Hirofumi Browse this author
Kaji, Hiromichi Browse this author
Takahashi, Yasuo Browse this author
Moniwa, Masahiro Browse this author
Fujiwara, Ichiro Browse this author
Yamaguchi, Takeshi Browse this author
Aoki, Masaki Browse this author
Maeno, Yoshinori Browse this author
Kobayashi, Toshio Browse this author
Yoshimaru, Masaki Browse this author
Keywords: electrical conductivity
electrical resistivity
insulating thin films
nickel compounds
random-access storage
transmission electron microscopy
Issue Date: 1-Mar-2011
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 109
Issue: 5
Start Page: 053702
Publisher DOI: 10.1063/1.3553868
Abstract: Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the "forming process" required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the "breakdown" type forming in the so-called "filament model" of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated.
Rights: Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 109, 053702 (2011) and may be found at https://dx.doi.org/10.1063/1.3553868
Type: article
URI: http://hdl.handle.net/2115/45604
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 有田 正志

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