| Title: | I-V measurement of NiO nanoregion during observation by transmission electron microscopy |
| Authors: | Fujii, Takashi Browse this author |
| Arita, Masashi Browse this author →KAKEN DB |
| Hamada, Kouichi Browse this author |
| Kondo, Hirofumi Browse this author |
| Kaji, Hiromichi Browse this author |
| Takahashi, Yasuo Browse this author |
| Moniwa, Masahiro Browse this author |
| Fujiwara, Ichiro Browse this author |
| Yamaguchi, Takeshi Browse this author |
| Aoki, Masaki Browse this author |
| Maeno, Yoshinori Browse this author |
| Kobayashi, Toshio Browse this author |
| Yoshimaru, Masaki Browse this author |
| Keywords: | electrical conductivity |
| electrical resistivity |
| insulating thin films |
| nickel compounds |
| random-access storage |
| transmission electron microscopy |
| Issue Date: | 1-Mar-2011 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 109 |
| Issue: | 5 |
| Start Page: | 053702 |
| Publisher DOI: | 10.1063/1.3553868 |
| Abstract: | Conduction measurements with simultaneous observations by transmission electron microscopy (TEM) were performed on a thin NiO film, which is a candidate material for resistance random access memories (ReRAMs). To conduct nanoscale experiments, a piezo-controlled TEM holder was used, where a fixed NiO sample and a movable Pt-Ir counter electrode were placed. After the counter electrode was moved to make contact with NiO, I-V measurements were carried out from any selected nanoregions. By applying a voltage of 2 V, the insulating NiO film was converted to a low resistance film. This phenomenon may be the "forming process" required to initialize ReRAMs. The corresponding TEM image indicated a structural change in the NiO layer generating a conductive bridge with a width of 30-40 nm. This finding supports the "breakdown" type forming in the so-called "filament model" of operation by ReRAMs. The inhomogeneity of resistance in the NiO film was also investigated. |
| Rights: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 109, 053702 (2011) and may be found at https://dx.doi.org/10.1063/1.3553868 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/45604 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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