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Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier
| Title: | Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier |
| Authors: | Akiho, Takafumi Browse this author | | Uemura, Tetsuya Browse this author | | Harada, Masanobu Browse this author | | Matsuda, Ken-ichi Browse this author | | Yamamoto, Masafumi Browse this author |
| Keywords: | cobalt alloys | | cobalt compounds | | Fermi level | | gallium arsenide | | III-V semiconductors | | iron alloys | | magnesium compounds | | manganese compounds | | Schottky barriers | | spin valves | | tunnelling magnetoresistance |
| Issue Date: | 6-Jun-2011 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 98 |
| Issue: | 23 |
| Start Page: | 232109 |
| Publisher DOI: | 10.1063/1.3595311 |
| Abstract: | The effects of MgO tunnel barriers on both junction resistance and tunneling anisotropic magnetoresistance (TAMR) characteristics of Co2MnSi(CMS)/MgO/n-GaAs junctions and Co50Fe50(CoFe)/MgO/n-GaAs junctions were investigated. The resistance-area (RA) product of the CMS/MgO/n-GaAs junctions showed an exponential dependence on MgO thickness (t_[MgO]), indicating that the MgO layer acts as a tunneling barrier. The RA product of CMS/MgO/n-GaAs with t_[MgO] < 1 nm was smaller than that of the sample without MgO. The observed spin-valvelike magnetoresistance of CMS/n-GaAs and CoFe/n-GaAs Schottky tunnel junctions attributed to the TAMR effect did not appear in the cases of CMS/MgO/n-GaAs and CoFe/MgO/n-GaAs tunnel junctions. The lowering of the RA product and the suppression of the TAMR effect caused by inserting a thin MgO layer between CMS and n-GaAs were both possibly due to suppression of the Fermi-level pinning of GaAs and lowering of the Schottky barrier height. |
| Rights: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 232109 (2011) and may be found at https://dx.doi.org/10.1063/1.3595311 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/46768 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 山本 眞史
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