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Elastic deformation blockade in a single-electron transistor
| Title: | Elastic deformation blockade in a single-electron transistor |
| Authors: | Nishiguchi, Norihiko Browse this author →KAKEN DB |
| Issue Date: | 16-Sep-2003 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review B |
| Volume: | 68 |
| Issue: | 12 |
| Start Page: | 121305-1 |
| End Page: | 121305-4 |
| Publisher DOI: | 10.1103/PhysRevB.68.121305 |
| Abstract: | A blockade phenomenon for electron transport in a freely suspended single-electron transistor (SET) is predicted. Voltages applied for its operation induce electromechanical forces acting on the SET, giving rise to structural deformation and collapse over a critical voltage. The electric characteristics become sensitive to charge fluctuations on the SET at the onset of the structural instability, leading to changes in the electrical characteristics that hinder electron transport through the SET around the zero-bias-voltage region. |
| Description: | RAPID COMMUNICATIONS |
| Rights: | © 2003 The American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/47084 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 西口 規彦
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