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Formation and dielectric properties of anodic oxide films on Zr–Al alloys

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Title: Formation and dielectric properties of anodic oxide films on Zr–Al alloys
Authors: Koyama, Shun Browse this author
Aoki, Yoshitaka Browse this author
Nagata, Shinji Browse this author
Habazaki, Hiroki Browse this author
Keywords: Anodic oxide
Crystalline ZrO2
Dielectric oxide
Issue Date: Oct-2011
Publisher: Springer
Journal Title: Journal of Solid State Electrochemistry
Volume: 15
Issue: 10
Start Page: 2221
End Page: 2229
Publisher DOI: 10.1007/s10008-010-1238-y
Abstract: Zr–Al alloys containing up to 26 at.% aluminum, prepared by magnetron sputtering, have been anodized in 0.1 mol dm−3 ammonium pentaborate electrolyte, and the structure and dielectric properties of the resultant anodic oxide films have been examined by grazing incidence X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy, and AC impedance spectroscopy. The anodic oxide film formed on zirconium consists of monoclinic and tetragonal ZrO2 with the former being a major phase. Two-layered anodic oxide films, comprising an outer thin amorphous layer and an inner main layer of crystalline tetragonal ZrO2 phase, are formed on the Zr–Al alloys containing 5 to 16 at.% aluminum. Further increase in the aluminum content to 26 at.% results in the formation of amorphous oxide layer throughout the thickness. The anodic oxide films become thin with increasing aluminum content, while the relative permittivity of anodic oxide shows a maximum at the aluminum content of 11 at.%. Due to major contribution of permittivity enhancement, the maximum capacitance of the anodic oxide films is obtained on the Zr–11 at.% Al alloy, being 1.7 times than on zirconium at the formation voltage of 100 V.
Rights: The original publication is available at
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 幅崎 浩樹

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