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Formation and dielectric properties of anodic oxide films on Zr–Al alloys
| Title: | Formation and dielectric properties of anodic oxide films on Zr–Al alloys |
| Authors: | Koyama, Shun Browse this author | | Aoki, Yoshitaka Browse this author | | Nagata, Shinji Browse this author | | Habazaki, Hiroki Browse this author |
| Keywords: | Anodic oxide | | Anodizing | | Crystalline ZrO2 | | Dielectric oxide | | Capacitor |
| Issue Date: | Oct-2011 |
| Publisher: | Ｓｐｒｉｎｇｅｒ |
| Journal Title: | Journal of Solid State Electrochemistry |
| Volume: | 15 |
| Issue: | 10 |
| Start Page: | 2221 |
| End Page: | 2229 |
| Publisher DOI: | 10.1007/s10008-010-1238-y |
| Abstract: | Zr–Al alloys containing up to 26 at.% aluminum, prepared by magnetron sputtering, have been anodized in 0.1 mol dm−3 ammonium pentaborate electrolyte, and the structure and dielectric properties of the resultant anodic oxide films have been examined by grazing incidence X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy, and AC impedance spectroscopy. The anodic oxide film formed on zirconium consists of monoclinic and tetragonal ZrO2 with the former being a major phase. Two-layered anodic oxide films, comprising an outer thin amorphous layer and an inner main layer of crystalline tetragonal ZrO2 phase, are formed on the Zr–Al alloys containing 5 to 16 at.% aluminum. Further increase in the aluminum content to 26 at.% results in the formation of amorphous oxide layer throughout the thickness. The anodic oxide films become thin with increasing aluminum content, while the relative permittivity of anodic oxide shows a maximum at the aluminum content of 11 at.%. Due to major contribution of permittivity enhancement, the maximum capacitance of the anodic oxide films is obtained on the Zr–11 at.% Al alloy, being 1.7 times than on zirconium at the formation voltage of 100 V. |
| Rights: | The original publication is available at www.springerlink.com. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/47415 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 幅崎 浩樹
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