Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions

Yamamoto, Masafumi; Ishikawa, Takayuki; Taira, Tomoyuki; Li, Gui-fang; Matsuda, Ken-ichi; Uemura, Tetsuya

doi:10.1088/0953-8984/22/16/164212


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Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions

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Title:	Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions
Authors:	Yamamoto, Masafumi Browse this author →KAKEN DB
	Ishikawa, Takayuki Browse this author
	Taira, Tomoyuki Browse this author
	Li, Gui-fang Browse this author
	Matsuda, Ken-ichi Browse this author
	Uemura, Tetsuya Browse this author
Issue Date:	28-Apr-2010
Publisher:	IOP Publishing
Journal Title:	Journal of Physics: Condensed Matter
Volume:	22
Issue:	16
Start Page:	164212
Publisher DOI:	10.1088/0953-8984/22/16/164212
PMID:	21386418
Abstract:	Fully epitaxial magnetic tunnel junctions (MTJs) with Co-based Heusler alloy Co2MnSi electrodes and a MgO tunnel barrier were fabricated with various values of Mn composition α for Co2MnαSi in Co2MnαSi/MgO/Co2MnαSi MTJs. The tunnel magnetoresistance (TMR) ratios at both 4.2 K and room temperature (RT) increased systematically with increasing α in Co2MnαSi electrodes from Mn-deficient compositions (α < 1) up to a certain Mn-rich composition (α > 1), demonstrating high TMR ratios of 1135% at 4.2 K and 236% at RT for MTJs with Mn-rich Co2MnαSi electrodes with α = 1.29. Identically fabricated Co2MnβGeδ/MgO/Co2MnβGeδ (δ = 0.38) MTJs showed similar dependence of the TMR ratio on Mn composition β, demonstrating relatively high TMR ratios of 650% at 4.2 K and 220% at RT for β = 1.40. The Mn composition dependence of the TMR ratio at both 4.2 K and RT observed commonly for both Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe MTJs can be attributed to suppressed minority-spin in-gap states around the Fermi level for Mn-rich Co2MnSi and Co2MnGe electrodes.
Rights:	© 2010 IOP Publishing Ltd
Type:	article (author version)
URI:	http://hdl.handle.net/2115/47495
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本眞史

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