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Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy
| Title: | Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy |
| Authors: | Kohashi, Yoshinori Browse this author | | Sato, Takuya Browse this author | | Ikejiri, Keitaro Browse this author | | Tomioka, Katsuhiro Browse this author →KAKEN DB | | Hara, Shinjiroh Browse this author | | Motohisa, Junichi Browse this author |
| Keywords: | Nanostructures | | Metal-organic vapor phase epitaxy | | Selective epitaxy | | Semiconducting III-V materials | | Semiconducting ternary compounds |
| Issue Date: | 1-Jan-2012 |
| Publisher: | Elsevier B.V. |
| Journal Title: | Journal of Crystal Growth |
| Volume: | 338 |
| Issue: | 1 |
| Start Page: | 47 |
| End Page: | 51 |
| Publisher DOI: | 10.1016/j.jcrysgro.2011.10.041 |
| Abstract: | Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and its growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/48549 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 小橋 義典
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