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Charge-transport in tin-iodide perovskite CH3NH3SnI3 : origin of high conductivity

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タイトル: Charge-transport in tin-iodide perovskite CH3NH3SnI3 : origin of high conductivity
著者: Takahashi, Yukari 著作を一覧する
Obara, Rena 著作を一覧する
Lin, Zheng-Zhong 著作を一覧する
Takahashi, Yukihiro 著作を一覧する
Naito, Toshio 著作を一覧する
Inabe, Tamotsu 著作を一覧する
Ishibashi, Shoji 著作を一覧する
Terakura, Kiyoyuki 著作を一覧する
発行日: 2011年 5月28日
出版者: Royal Society of Chemistry
誌名: Dalton Transactions
巻: 40
号: 20
開始ページ: 5563
終了ページ: 5568
出版社 DOI: 10.1039/c0dt01601b
抄録: The structural and electrical properties of a metal-halide cubic perovskite, CH3NH3SnI3, have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity.
Rights: Dalton Trans., 2011, 40, 5563-5568 - Reproduced by permission of The Royal Society of Chemistry (RSC)
資料タイプ: article (author version)
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 稲辺 保


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