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Charge-transport in tin-iodide perovskite CH3NH3SnI3 : origin of high conductivity

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Title: Charge-transport in tin-iodide perovskite CH3NH3SnI3 : origin of high conductivity
Authors: Takahashi, Yukari Browse this author
Obara, Rena Browse this author
Lin, Zheng-Zhong Browse this author
Takahashi, Yukihiro Browse this author
Naito, Toshio Browse this author
Inabe, Tamotsu Browse this author →KAKEN DB
Ishibashi, Shoji Browse this author
Terakura, Kiyoyuki Browse this author
Issue Date: 28-May-2011
Publisher: Royal Society of Chemistry
Journal Title: Dalton Transactions
Volume: 40
Issue: 20
Start Page: 5563
End Page: 5568
Publisher DOI: 10.1039/c0dt01601b
PMID: 21494720
Abstract: The structural and electrical properties of a metal-halide cubic perovskite, CH3NH3SnI3, have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity.
Rights: Dalton Trans., 2011, 40, 5563-5568 - Reproduced by permission of The Royal Society of Chemistry (RSC)
Type: article (author version)
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 稲辺 保

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