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Charge-transport in tin-iodide perovskite CH3NH3SnI3 : origin of high conductivity
Title: | Charge-transport in tin-iodide perovskite CH3NH3SnI3 : origin of high conductivity |
Authors: | Takahashi, Yukari Browse this author | Obara, Rena Browse this author | Lin, Zheng-Zhong Browse this author | Takahashi, Yukihiro Browse this author | Naito, Toshio Browse this author | Inabe, Tamotsu Browse this author →KAKEN DB | Ishibashi, Shoji Browse this author | Terakura, Kiyoyuki Browse this author |
Issue Date: | 28-May-2011 |
Publisher: | Royal Society of Chemistry |
Journal Title: | Dalton Transactions |
Volume: | 40 |
Issue: | 20 |
Start Page: | 5563 |
End Page: | 5568 |
Publisher DOI: | 10.1039/c0dt01601b |
PMID: | 21494720 |
Abstract: | The structural and electrical properties of a metal-halide cubic perovskite, CH3NH3SnI3, have been examined. The band structure, obtained using first-principles calculation, reveals a well-defined band gap at the Fermi level. However, the temperature dependence of the single-crystal electrical conductivity shows metallic behavior down to low temperatures. The temperature dependence of the thermoelectric power is also metallic over the whole temperature range, and the large positive value indicates that charge transport occurs with a low concentration of hole carriers. The metallic properties of this as-grown crystal are thus suggested to result from spontaneous hole-doping in the crystallization process, rather than the semi-metal electronic structure. The present study shows that artificial hole doping indeed enhances the conductivity. |
Rights: | Dalton Trans., 2011, 40, 5563-5568 - Reproduced by permission of The Royal Society of Chemistry (RSC) |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/48597 |
Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 稲辺 保
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