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Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/48661

Title: Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy
Authors: Sasakura, H. Browse this author →KAKEN DB
Hermannstädter, C. Browse this author
Dorenbos, S. N. Browse this author
Akopian, N. Browse this author
van Kouwen, M. P. Browse this author
Motohisa, J. Browse this author
Kobayashi, Y. Browse this author
Kumano, H. Browse this author
Kondo, K. Browse this author
Tomioka, K. Browse this author
Fukui, T. Browse this author
Suemune, I. Browse this author
Zwiller, V. Browse this author
Issue Date: 15-Feb-2012
Publisher: American Physical Society
Journal Title: Physical Review B
Volume: 85
Issue: 7
Start Page: 075324
Publisher DOI: 10.1103/PhysRevB.85.075324
Abstract: We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. Elongation of the transverse exciton-spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the nanowire. The longitudinal exciton-spin relaxation time is evaluated by the degree of the random polarization of emission originating from exciton states confined in a single-nanowire quantum dot by using Mueller calculus based on Stokes parameters representation. The reduction in the random polarization component with decreasing excitation power is caused by suppression of the exchange interaction of electron and hole due to an optically induced internal electric field by the dipoles at the wurtzite and zinc-blende heterointerfaces in the InP nanowire.
Rights: ©2012 American Physical Society
Type: article
URI: http://hdl.handle.net/2115/48661
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 笹倉 弘理

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