HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

Thickness dependence of proton conductivity of anodic ZrO2-WO3-SiO2 nanofilms

Files in This Item:
JPS205_194-200.pdf635.57 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49115

Title: Thickness dependence of proton conductivity of anodic ZrO2-WO3-SiO2 nanofilms
Authors: Ye, Ke Browse this author
Aoki, Yoshitaka Browse this author →KAKEN DB
Tsuji, Etsushi Browse this author
Nagata, Shinji Browse this author
Habazaki, Hiroki Browse this author →KAKEN DB
Keywords: Amorphous materials
Anodic oxidation
Ion conducting materials
Proton transport
Nanofilms
Issue Date: 1-May-2012
Publisher: Elsevier B.V.
Journal Title: Journal of Power Sources
Volume: 205
Start Page: 194
End Page: 200
Publisher DOI: 10.1016/j.jpowsour.2012.01.083
Abstract: Amorphous ZrO2-WO3-SiO2 nanofilms are simply prepared by anodizing of sputter-deposited Zr37W47Si16 alloy at several formation voltages for 1.8 ks in 0.1 mol dm-3 phosphoric acid electrolyte at 20℃. Efficient proton conductivity was observed after thermal treatment at 250℃ with the conductivity enhanced by reducing the film thickness. The conductivity is enhanced more than one order of magnitude by reducing the thickness from 300 to 140 nm. The anodic oxide films consist of two layers, comprising a thin outer ZrO2 layer free from silicon and tungsten species and an inner main layer containing all zirconium, silicon and tungsten species. The thickness-dependent conductivity of the anodic ZrO2-WO3-SiO2 films is associated with the conductivity of the outer ZrO2 layer, which increases exponentially with reducing the film thickness. The area-specific resistivity of 0.14 Ω cm2, which is below the minimum requirement (0.2 Ω cm2) for a practical electrolyte membrane in commercial fuel cells, is achieved at a temperature at 225 ℃ for 100 nm-thick anodic ZrO2-WO3-SiO2 films.
Type: article (author version)
URI: http://hdl.handle.net/2115/49115
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 幅崎 浩樹

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

 - Hokkaido University