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Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

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Title: Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth
Authors: Masubuchi, Yuji Browse this author →KAKEN DB
Yamaoka, Ryohei Browse this author
Tohei, Tetsuya Browse this author
Mizoguchi, Teruyasu Browse this author
Ikuhara, Yuichi Browse this author
Kikkawa, Shinichi Browse this author →KAKEN DB
Keywords: Fibres
Electron microscopy
Oxynitrides
Defects
Issue Date: Jul-2012
Publisher: Elsevier
Journal Title: Journal of the European Ceramic Society
Volume: 32
Issue: 9
Start Page: 1989
End Page: 1993
Publisher DOI: 10.1016/j.jeurceramsoc.2011.10.038
Abstract: The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 μm but they did not grow laterally when the ammonia flow rate was 50 mL/min.
Type: article (author version)
URI: http://hdl.handle.net/2115/49511
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 鱒渕 友治

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