Resistance switching properties of molybdenum oxide films


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49517

Title:	Resistance switching properties of molybdenum oxide films
Authors:	Arita, M. Browse this author →KAKEN DB
	Kaji, H. Browse this author
	Fujii, T. Browse this author
	Takahashi, Y. Browse this author
Keywords:	Resistance switching memory
	ReRAM
	Non-volatile memory
	MoO3
	Binary metal oxide
Issue Date:	1-May-2012
Publisher:	Elsevier B.V.
Journal Title:	Thin Solid Films
Volume:	520
Issue:	14
Start Page:	4762
End Page:	4767
Publisher DOI:	10.1016/j.tsf.2011.10.174
Abstract:	Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600℃ were composed of MoO3 and were switchable. Current-to-voltage curves, which were measured in air at room temperature by using a Pt-Ir probe as the top electrode, indicated the yielding of both the monopolar and bipolar switching properties. The resistance on-off ratio was between 10 and 10^[2].
Type:	article (author version)
URI:	http://hdl.handle.net/2115/49517
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 有田正志

OAI-PMH ( junii2 , jpcoar_1.0 )

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