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Spin dependent electronic structure and level crossings as a function of magnetic field in InAs nanowire
Title: | Spin dependent electronic structure and level crossings as a function of magnetic field in InAs nanowire |
Authors: | Jin, S.Q. Browse this author | Waugh, J. Browse this author | Matsuura, T. Browse this author | Faniel, S. Browse this author | Wu, H.Z. Browse this author | Koga, Takaaki Browse this author →KAKEN DB |
Keywords: | spintronics | Rashba effect | AB effect | spin-orbit interaction | quantum wires | mesoscopic transport |
Issue Date: | 31-Jan-2010 |
Publisher: | Elsevier B.V. |
Journal Title: | Physics Procedia |
Volume: | 3 |
Issue: | 2 |
Start Page: | 1321 |
End Page: | 1324 |
Publisher DOI: | 10.1016/j.phpro.2010.01.184 |
Abstract: | We point out that the electric field formed in the surface inversion layer in InAs nanowires leads to effective magnetic fields, due to the Rashba effect, that are mostly aligned along the wire axis, i.e., parallel to the external magnetic field B. While this situation leads to some similarities in spin splitting between the Zeeman and Rashba effects, extensive theoretical simulations revealed that large and small spin splittings should take place alternately at Fermi energies with increasing magnetic field B, as a result of the competition between the Rashba and Zeeman spin splittings. We suggest that an experimental detection of such characteristics should bring up quantitative insights into the relative strengths between the Rashba and Zeeman magnetic fields. |
Type: | article (author version) |
URI: | http://hdl.handle.net/2115/49651 |
Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 古賀 貴亮
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