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The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure

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Title: The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure
Authors: Kondo, H. Browse this author
Kaji, H. Browse this author
Fujii, T. Browse this author
Hamada, K. Browse this author
Arita, M. Browse this author →KAKEN DB
Takahashi, Y. Browse this author →KAKEN DB
Keywords: Resistance switching memory
ReRAM
Nonvolatile memory
NiO
Binary Metal oxide
Issue Date: 2010
Publisher: IOP Publishing
Journal Title: IOP Conference Series: Materials Science and Engineering
Volume: 8
Issue: 1
Start Page: 012034
Publisher DOI: 10.1088/1757-899X/8/1/012034
Abstract: The resistive switching of NiO sandwiched between Pt bottom and top electrodes are formed by thermal oxidation at the temperature from 300℃ to 800℃. The ReRAM characteristics are investigated from the view point of practical applications. The stable and uniform formation of NiO films are revealed by XPS analysis and the chemical compositions of NiO are almost independent of oxidation temperatures. However, the forming voltages of the film prepared at higher oxidation temperature are scattered and reach to high values. This fact indicates that the forming process occurs at the weak spot, and the density of the weak spot is low in the film formed at higher temperature. As a result, the NiO prepared at lower temperature shows stable and lower forming voltages.
Rights: Published under licence in IOP Conference Series: Materials Science and Engineering by IOP Publishing Ltd.
Type: article
URI: http://hdl.handle.net/2115/49861
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 高橋 庸夫

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