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The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure
Title: | The influence of annealing temperature on ReRAM characteristics of metal/NiO/metal structure |
Authors: | Kondo, H. Browse this author | Kaji, H. Browse this author | Fujii, T. Browse this author | Hamada, K. Browse this author | Arita, M. Browse this author →KAKEN DB | Takahashi, Y. Browse this author →KAKEN DB |
Keywords: | Resistance switching memory | ReRAM | Nonvolatile memory | NiO | Binary Metal oxide |
Issue Date: | 2010 |
Publisher: | IOP Publishing |
Journal Title: | IOP Conference Series: Materials Science and Engineering |
Volume: | 8 |
Issue: | 1 |
Start Page: | 012034 |
Publisher DOI: | 10.1088/1757-899X/8/1/012034 |
Abstract: | The resistive switching of NiO sandwiched between Pt bottom and top electrodes are formed by thermal oxidation at the temperature from 300℃ to 800℃. The ReRAM characteristics are investigated from the view point of practical applications. The stable and uniform formation of NiO films are revealed by XPS analysis and the chemical compositions of NiO are almost independent of oxidation temperatures. However, the forming voltages of the film prepared at higher oxidation temperature are scattered and reach to high values. This fact indicates that the forming process occurs at the weak spot, and the density of the weak spot is low in the film formed at higher temperature. As a result, the NiO prepared at lower temperature shows stable and lower forming voltages. |
Rights: | Published under licence in IOP Conference Series: Materials Science and Engineering by IOP Publishing Ltd. |
Type: | article |
URI: | http://hdl.handle.net/2115/49861 |
Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 高橋 庸夫
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