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Time resolved imaging of carrier and thermal transport in silicon

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Title: Time resolved imaging of carrier and thermal transport in silicon
Authors: Hurley, D. H. Browse this author
Wright, O. B. Browse this author
Matsuda, O. Browse this author →KAKEN DB
Shinde, S. L. Browse this author
Keywords: carrier density
carrier lifetime
elemental semiconductors
thermal diffusion
Issue Date: 15-Jan-2010
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 107
Issue: 2
Start Page: 023521
Publisher DOI: 10.1063/1.3272827
Abstract: We use ultrashort optical pulses to microscopically image carrier and thermal diffusion in two spatial dimensions in pristine and mechanically polished surfaces of crystalline silicon. By decomposing changes in reflectivity in the latter sample into a transient component that varies with delay time and a steady-state component that varies with pump chopping frequency, the influence of thermal diffusion is isolated from that of carrier diffusion and recombination. Additionally, studies using carrier injection density as a parameter are used to clearly identify the carrier recombination pathway.
Rights: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 107, 023521 (2010) and may be found at
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 松田 理

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