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The Effects of Nitrogen and Plasma Power on Electrochemical Properties of Boron-Doped Diamond Electrodes Grown by MPCVD
| Title: | The Effects of Nitrogen and Plasma Power on Electrochemical Properties of Boron-Doped Diamond Electrodes Grown by MPCVD |
| Authors: | Yagi, Ichizo Browse this author | | Tsunozaki, Kentaro Browse this author | | Fujishima, Akira Browse this author | | Ohtani, Bunsho Browse this author →KAKEN DB | | Uosaki, Kohei Browse this author →KAKEN DB |
| Keywords: | diamond | | boron | | elemental semiconductors | | semiconductor thin films | | nitrogen | | plasma CVD | | semiconductor growth | | electrochemical electrodes |
| Issue Date: | 2002 |
| Publisher: | The Electrochemical Society |
| Journal Title: | Journal of The Electrochemical Society |
| Volume: | 149 |
| Issue: | 1 |
| Start Page: | E1 |
| End Page: | E5 |
| Publisher DOI: | 10.1149/1.1425795 |
| Abstract: | The influences of nitrogen addition and the attenuation of microwave power during microwave plasma-assisted chemical vapor deposition (MPCVD) of diamond films on electrochemical properties of the grown films were investigated. Although diamond films grown in the presence of a small amount of nitrogen did not contain sp2 carbon and appeared to be normally deposited films, the electrical and electrochemical properties were different from films grown under an atmosphere without nitrogen. Especially, the potential windows of diamond films grown in the presence of nitrogen at low microwave power were very wide and extended to 3.6 V in sulfuric acid solution, which is comparable to the widest value of the potential window of diamond electrodes reported till now. It was also found that the attenuation of the plasma power during MPCVD by itself was effective in the expansion of the potential window because of the defect-free growth of diamond crystals. |
| Rights: | © The Electrochemical Society, Inc. 2001. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 2002 volume 149, issue 1, E1-E5. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50233 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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