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In situ x-ray standing-wave analysis of electrodeposited Cu monolayers on GaAs(001)

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Title: In situ x-ray standing-wave analysis of electrodeposited Cu monolayers on GaAs(001)
Authors: Scherb, G. Browse this author
Kazimirov, A. Browse this author
Zegenhagen, J. Browse this author
Lee, T. L. Browse this author
Bedzyk, M. J. Browse this author
Noguchi, H. Browse this author
Uosaki, K. Browse this author →KAKEN DB
Issue Date: 15-Oct-1998
Publisher: American Physical Society
Journal Title: Physical Review B
Volume: 58
Issue: 16
Start Page: 10800
End Page: 10805
Publisher DOI: 10.1103/PhysRevB.58.10800
Abstract: Copper was electrodeposited onto n- and p-type GaAs(001) from mMol solutions of CuSO4 in 0.5 Mol sulfuric acid and the registration of the Cu adsorbate was analyzed with respect to the GaAs lattice in situ with x-ray standing waves, recording the Cu-Kα fluorescence radiation from the sample surface while scanning the GaAs(004) Bragg reflection. For coverages below 1 ML, the determined coherent position PCu^[004]≈0.0 is in agreement with a substitutional site of the Cu. However, the coherent fraction F004≼0.4 indicates that the Cu is not well ordered or occupies other sites. The measurements also show that part of the Cu diffuses a few nm into the bulk in an amount that is larger for n type (≈0.5 ML) than for p type (≲0.05 ML). If thick Cu layers are stripped at anodic potentials, the Cu desorption starts to significantly slow down at Cu coverages of about 10 ML while the anodic current stays almost constant, which is explained by the fact that the Cu film is no longer continuous. At coverages ≲1 ML the stripping becomes extremely slow and Cu stays at the GaAs(001) interface even while the GaAs surface dissolves, exhibiting a "reversed surfactant" behavior.
Rights: © 1998 American Physical Society
Type: article
URI: http://hdl.handle.net/2115/50243
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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