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Photoelectrochemical and Photoluminescence (PL) Properties of p-Type Porous Silicon/Electrolyte Solution Interface : Potential Dependent PL Spectra as a Result of Size Dependent Quenching

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Title: Photoelectrochemical and Photoluminescence (PL) Properties of p-Type Porous Silicon/Electrolyte Solution Interface : Potential Dependent PL Spectra as a Result of Size Dependent Quenching
Authors: Noguchi, Hidenori Browse this author
Kondo, Toshihiro Browse this author
Uosaki, Kohei Browse this author →KAKEN DB
Issue Date: 19-Jun-1997
Publisher: American Chemical Society
Journal Title: Journal of Physical Chemistry B
Volume: 101
Issue: 25
Start Page: 4978
End Page: 4981
Publisher DOI: 10.1021/jp970309d
Abstract: Potential dependences of the photocurrent and visible photoluminescence (PL) from p-type porous silicon (p-PS) in 0.2 M Na2SO4 aqueous solution were investigated. When the potential became more negative than -0.6 V, a cathodic photocurrent was observed and PL was quenched. When the potential was swept back in the positive direction, the PL intensity increased, the photocurrent decreased, and both returned to the initial values. PL spectra measurements showed that the quenching of the PL intensity was accompanied by a blue shift of the peak wavelength as a result of the selective quenching of the red portion of the PL spectra. The experimentally observed results can be explained by considering the dependence of electron accumulation on the conduction band levels in PS layer, which is in turn related to the Si nanocrystalline size.
Type: article
URI: http://hdl.handle.net/2115/50248
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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