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X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer

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Title: X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer
Authors: Murakoshi, Kei Browse this author
Uosaki, K. Browse this author →KAKEN DB
Keywords: SILICON
POROUS MATERIALS
ANODIZATION
PHOTOELECTRON SPECTROSCOPY
SURFACE TREATMENTS
CHEMICAL COMPOSITION
SURFACE STRUCTURE
OXIDES
LUMINESCENCE
Issue Date: 5-Apr-1993
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 62
Issue: 14
Start Page: 1676
End Page: 1678
Publisher DOI: 10.1063/1.109597
Abstract: The effect of various surface treatments of a porous silicon layer (PSL) including etching in NaOH solution on the chemical nature of the surface was studied using x-ray photoelectron spectroscopy. As-prepared PSL, which is formed by anodic oxidation of silicon in ethanolic HF solution, is covered with silicon oxide. NaOH treatment removes the surface oxide almost completely. Chemical states of surface silicon at the NaOH-treated PSL surface are very close to that at the HF-treated silicon surface. Surface oxygen on the NaOH-treated PSL surface seems to be in the form of Si-OH.
Rights: Copyright 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 62, 1676 (1993) and may be found at https://dx.doi.org/10.1063/1.109597
Type: article
URI: http://hdl.handle.net/2115/50251
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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