Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Science / Faculty of Science >
Peer-reviewed Journal Articles, etc >
X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer
Title: | X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer |
Authors: | Murakoshi, Kei Browse this author | Uosaki, K. Browse this author →KAKEN DB |
Keywords: | SILICON | POROUS MATERIALS | ANODIZATION | PHOTOELECTRON SPECTROSCOPY | SURFACE TREATMENTS | CHEMICAL COMPOSITION | SURFACE STRUCTURE | OXIDES | LUMINESCENCE |
Issue Date: | 5-Apr-1993 |
Publisher: | American Institute of Physics |
Journal Title: | Applied Physics Letters |
Volume: | 62 |
Issue: | 14 |
Start Page: | 1676 |
End Page: | 1678 |
Publisher DOI: | 10.1063/1.109597 |
Abstract: | The effect of various surface treatments of a porous silicon layer (PSL) including etching in NaOH solution on the chemical nature of the surface was studied using x-ray photoelectron spectroscopy. As-prepared PSL, which is formed by anodic oxidation of silicon in ethanolic HF solution, is covered with silicon oxide. NaOH treatment removes the surface oxide almost completely. Chemical states of surface silicon at the NaOH-treated PSL surface are very close to that at the HF-treated silicon surface. Surface oxygen on the NaOH-treated PSL surface seems to be in the form of Si-OH. |
Rights: | Copyright 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 62, 1676 (1993) and may be found at https://dx.doi.org/10.1063/1.109597 |
Type: | article |
URI: | http://hdl.handle.net/2115/50251 |
Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 魚崎 浩平
|