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Effects of the Helmholtz Layer Capacitance on the Potential Distribution at Semiconductor/Electrolyte Interface and the Linearity of the Mott-Schottky Plot
| Title: | Effects of the Helmholtz Layer Capacitance on the Potential Distribution at Semiconductor/Electrolyte Interface and the Linearity of the Mott-Schottky Plot |
| Authors: | Uosaki, Kohei Browse this author →KAKEN DB | | Kita, Hideaki Browse this author |
| Keywords: | semiconductor-electrolyte boundaries | | capacitance | | electric potential | | photoelectrochemistry | | semiconductor | | Mott‐Schottky plot | | Helmholtz layer capacitance |
| Issue Date: | 1983 |
| Publisher: | The Electrochemical Society |
| Journal Title: | Journal of The Electrochemical Society |
| Volume: | 130 |
| Issue: | 4 |
| Start Page: | 895 |
| End Page: | 897 |
| Publisher DOI: | 10.1149/1.2119853 |
| Rights: | © The Electrochemical Society, Inc. 1983. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 1983 volume 130, issue 4, 895-897. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50257 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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