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Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry

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Title: Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry
Authors: Uemura, Tetsuya Browse this author →KAKEN DB
Kondo, Kenji Browse this author →KAKEN DB
Fujisawa, Jun Browse this author
Matsuda, Ken-ichi Browse this author →KAKEN DB
Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date: 24-Sep-2012
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 101
Issue: 13
Start Page: 132411
Publisher DOI: 10.1063/1.4754545
Abstract: The MgO thickness dependence of Hanle signals in Co50Fe50/MgO/n-Si tunnel junctions was investigated using a three-terminal geometry. The observed Hanle signal is several orders of magnitude stronger than the predicted value by conventional theory as reported in many literatures. Furthermore, the magnitude of the spin signal depends on the junction resistance rather than the channel resistance, implying that the largest part of the observed Hanle signal is not caused by spin accumulation in the semiconductor region. A possible origin of the observed strong Hanle signal is due to a modulation of the tunneling resistance by a magnetic field, which is induced by the spin precession in localized states formed in the vicinity of the Co50Fe50/MgO interface.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 132411 (2012) and may be found at https://dx.doi.org/10.1063/1.4754545
Type: article
URI: http://hdl.handle.net/2115/50420
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植村 哲也

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