Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

Liu, Hong-xi; Honda, Yusuke; Taira, Tomoyuki; Matsuda, Ken-ichi; Arita, Masashi; Uemura, Tetsuya; Yamamoto, Masafumi

doi:10.1063/1.4755773


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Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

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Title:	Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling
Authors:	Liu, Hong-xi Browse this author
	Honda, Yusuke Browse this author
	Taira, Tomoyuki Browse this author
	Matsuda, Ken-ichi Browse this author →KAKEN DB
	Arita, Masashi Browse this author →KAKEN DB
	Uemura, Tetsuya Browse this author →KAKEN DB
	Yamamoto, Masafumi Browse this author →KAKEN DB
Keywords:	buffer layers
	cobalt alloys
	dislocations
	giant magnetoresistance
	magnesium compounds
	magnetic multilayers
	manganese alloys
	metallic epitaxial layers
	silicon alloys
	tunnelling magnetoresistance
Issue Date:	24-Sep-2012
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	101
Issue:	13
Start Page:	132418
Publisher DOI:	10.1063/1.4755773
Abstract:	Giant tunnel magnetoresistance (TMR) ratios of up to 1995% at 4.2K and up to 354% at 290K were obtained for epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring a reduced lattice mismatch in the MTJ trilayer by introducing a thin Co2MnSi lower electrode deposited on a Co50Fe50 buffer layer. The obtained giant TMR ratios can be explained by the enhanced contribution of coherent tunneling originating from the increased misfit dislocation spacing at the lower and upper interfaces with a MgO barrier along with the half-metallicity of Co2MnSi electrodes.
Rights:	Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 132418 (2012) and may be found at https://dx.doi.org/10.1063/1.4755773
Type:	article
URI:	http://hdl.handle.net/2115/50424
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本眞史

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