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Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy

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Title: Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy
Authors: Ishikawa, Takayuki Browse this author
Itabashi, Naoki Browse this author
Taira, Tomoyuki Browse this author
Matsuda, Ken-ichi Browse this author →KAKEN DB
Uemura, Tetsuya Browse this author →KAKEN DB
Yamamoto, Masafumi Browse this author →KAKEN DB
Issue Date: 4-Mar-2009
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 94
Issue: 9
Start Page: 092503
Publisher DOI: 10.1063/1.3083560
Abstract: We investigated at 4.2 K the differential conductance (dI/dV) versus V characteristics of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring high tunnel magnetoresistance ratios of about 700% at 4.2 K (about 180% at room temperature). We developed a tunneling model to explain the observed tunneling spectra and showed the critical role played by interface states for minority spins existing around the Fermi level of Co2MnSi electrodes facing a MgO tunnel barrier in the spin-dependent tunneling characteristics of these MTJs with half-metallic electrodes.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Appl. Phys. Lett. 94 9, 092503 and may be found at https://dx.doi.org/10.1063/1.3083560
Type: article
URI: http://hdl.handle.net/2115/50604
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 山本 眞史

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