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Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
| Title: | Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions |
| Authors: | Ishikawa, Takayuki Browse this author | | Hakamata, Shinya Browse this author | | Matsuda, Ken-ichi Browse this author →KAKEN DB | | Uemura, Tetsuya Browse this author →KAKEN DB | | Yamamoto, Masafumi Browse this author →KAKEN DB |
| Issue Date: | 1-Apr-2008 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 103 |
| Issue: | 7 |
| Start Page: | 07A919 |
| Publisher DOI: | 10.1063/1.2843756 |
| Abstract: | Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (tMgO) at RT, having a period of 0.28 nm, for tMgO ranging from 1.8 to 3.0 nm. |
| Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 103, 07A919 (2008) and may be found at https://dx.doi.org/10.1063/1.2843756 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50618 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 山本 眞史
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