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Solvent Effects on the Transient Characteristics of Liquid-Gate Field Effect Transistors with Silicon Substrate

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/51905

Title: Solvent Effects on the Transient Characteristics of Liquid-Gate Field Effect Transistors with Silicon Substrate
Authors: Yanase, Takashi Browse this author
Hasegawa, Tetsuya Browse this author
Nagahama, Taro Browse this author
Shimada, Toshihiro Browse this author →KAKEN DB
Issue Date: Nov-2012
Publisher: The Japan Society of Applied Physics
Journal Title: Japanese Journal of Applied Physics
Volume: 51
Start Page: 111803
Publisher DOI: 10.1143/JJAP.51.111803
Abstract: The transient characteristics of electric double layer (EDL) gated field-effect transistors with Si as an active semiconductor were studied using various electrolyte solutions of LiBF4 by applying a step-function voltage to determine the optimum electrolyte for semiconductor circuits using EDLs. The tR, determined by EDL dynamics in the present experiment, was minimum as a function of the kind of solvent used owing to the competing effects of the EDL thickness and viscosity. The responses of the electrolyte solutions with various solvents at the same concentration were classified into three categories on the basis of tR: slow response of a complex-forming solvent, intermediate response of protic solvents, and fast response of nonprotic solvents. The best response time was 55 µs when a 1.0 M acetonitrile solution was used as the liquid-gate insulator.
Rights: © 2012 The Japan Society of Applied Physics
Relation: http://jjap.jsap.jp/link?JJAP/51/111803/
Type: article (author version)
URI: http://hdl.handle.net/2115/51905
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 島田 敏宏

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