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Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

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Title: Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates
Authors: Jahan, Nahid A. Browse this author
Hermannstädter, Claus Browse this author
Huh, Jae-Hoon Browse this author
Sasakura, Hirotaka Browse this author →KAKEN DB
Rotter, Thomas J. Browse this author
Ahirwar, Pankaj Browse this author
Balakrishnan, Ganesh Browse this author
Akahane, Kouichi Browse this author
Sasaki, Masahide Browse this author
Kumano, Hidekazu Browse this author →KAKEN DB
Suemune, Ikuo Browse this author →KAKEN DB
Keywords: elongation
excited states
III-V semiconductors
indium compounds
oscillator strengths
photoluminescence
quenching (thermal)
semiconductor growth
semiconductor quantum dots
wetting
Issue Date: 21-Jan-2013
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 113
Issue: 3
Start Page: 033506
Publisher DOI: 10.1063/1.4775768
Abstract: InAs quantum dots (QDs) grown on InP substrates can be used as light emitters in the telecommunication bands. In this paper, we present optical characterization of high-density circular quantum dots (QDots) grown on InP(311)B substrates and elongated dots (QDashes) grown on InP(001) substrates. We study the charge carrier transfer and luminescence thermal quenching mechanisms of the QDots and QDashes by investigating the temperature dependence of their time-integrated and time-resolved photoluminescence properties. This results in two different contributions of the thermal activation energies. The larger activation energies are attributed to the carrier escape to the barrier layer and the wetting layer (WL) from QDots and QDashes, respectively. The smaller activation energies are found to be originated from inter-dot/dash carrier transfer via coupled excited states. The variation of the average oscillator strength associated with the carrier re-distribution is discussed. The relation of the two activation energies is also quantitatively studied with the measurements of excited-state and ground-state energy separations. Finally, we show an approach to isolate individual quantum dots or dashes in a suitable nanostructure.
Rights: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 113, 033506 (2013) and may be found at https://dx.doi.org/10.1063/1.4775768
Type: article
URI: http://hdl.handle.net/2115/52061
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: Nahid A. Jahan

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