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The Observation of “Conduction Spot” on NiO Resistance Random Access Memory
| Title: | The Observation of “Conduction Spot” on NiO Resistance Random Access Memory |
| Authors: | Kondo, Hirofumi Browse this author | | Arita, Masashi Browse this author | | Fujii, Takashi Browse this author | | Kaji, Hiromichi Browse this author | | Moniwa, Masahiro Browse this author | | Yamaguchi, Takeshi Browse this author | | Fujiwara, Ichiro Browse this author | | Yoshimaru, Masaki Browse this author | | Takahashi, Yasuo Browse this author |
| Issue Date: | Aug-2011 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics |
| Volume: | 50 |
| Issue: | 8 |
| Start Page: | 081101 |
| Publisher DOI: | 10.1143/JJAP.50.081101 |
| Abstract: | We succeeded in observing the “conduction spot” (CS) in the capacitor structure resistance random access memory (ReRAM), which includes a conductive filament. In this study, we used NiO prepared by thermal oxidation at a high temperature as 800 °C. It requires a forming process using an extra high voltage, which partly removes the top electrode from the resistance switched area. These experiments enabled us to observe the conductive filament directly in CS on NiO ReRAM by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). From SEM images, CSs seem to be produced by some kind of breakdown, but we confirmed the reproducible resistance switching at least 50 cycles after the CS generation. By energy dispersive X-ray spectroscopy (EDX) with TEM observations, drastic oxygen reduction was observed in a local area within CS of NiO films. Moreover, the CS area depended on the injection power for forming. These experimental data suggest that the miniaturization of ReRAM will be achieved by reducing the injection power for forming. |
| Rights: | © 2011 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/52264 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 有田 正志
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