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Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy
| Title: | Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy |
| Authors: | Fujii, Takashi Browse this author | | Arita, Masashi Browse this author →KAKEN DB | | Takahashi, Yasuo Browse this author →KAKEN DB | | Fujiwara, Ichiro Browse this author |
| Issue Date: | 28-Mar-2012 |
| Publisher: | Materials Research Society |
| Journal Title: | Journal of Materials Research |
| Volume: | 27 |
| Issue: | 6 |
| Start Page: | 886 |
| End Page: | 896 |
| Publisher DOI: | 10.1557/jmr.2011.437 |
| Abstract: | In situ transmission electron microscopy (TEM) was carried out to investigate the dynamics of resistance switching in a solid electrolyte, Cu-Ge-S. By applying voltage to Pt-Ir/Cu-Ge-S/Pt-Ir, where Pt-Ir constituted the electrodes, a deposit containing conductive filaments composed mainly of Cu was formed around the cathode. As voltage continued to be applied, the deposit grew and finally narrow conductive filaments made contact with the anode. This corresponded to resistance switching from high- to low-resistance states (HRS and LRS). By alternating the voltage, the deposit contracted toward the cathode and detached from the anode. The resistance immediately changed from LRS to HRS. By applying voltage, the deposit containing Cu-based filaments grew and shrank, and resistance switching occurred at the electrolyte-anode interface. This conductive filament-formation model, which was recently reported, was experimentally confirmed with TEM through dynamic observations of the deposit-containing filaments. |
| Rights: | © Materials Research Society 2012 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/52272 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 高橋 庸夫
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