|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
Ion irradiation synthesis of Ag-Au bimetallic nanospheroids in SiO2 glass substrate with tunable surface plasmon resonance frequency
| Title: | Ion irradiation synthesis of Ag-Au bimetallic nanospheroids in SiO2 glass substrate with tunable surface plasmon resonance frequency |
| Authors: | Meng, Xuan Browse this author | | Shibayama, Tamaki Browse this author →KAKEN DB | | Yu, Ruixuan Browse this author | | Takayanagi, Shinya Browse this author | | Watanabe, Seiichi Browse this author |
| Issue Date: | 7-Aug-2013 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of applied physics |
| Volume: | 114 |
| Issue: | 5 |
| Start Page: | 054308-1 |
| End Page: | 054308-9 |
| Publisher DOI: | 10.1063/1.4817725 |
| Abstract: | Ag-Au bimetallic nanospheroids with tunable localized surface plasmon resonance (LSPR) were synthesized by 100 keV Ar-ion irradiation of 30 nm Ag-Au bimetallic films deposited on SiO2 glass substrates. A shift of the LSPR peaks toward shorter wavelengths was observed up to an irradiation fluence of 1.0 x 10(17) cm(-2), and then shifted toward the longer wavelength because of the increase of fragment volume under ion irradiation. Further control of LSPR frequency over a wider range was realized by modifying the chemical components. The resulting LSPR frequencies lie between that of the pure components, and an approximate linear shift of the LSPR toward the longer wavelength with the Au concentration was achieved, which is in good agreement with the theoretical calculations based on Gans theory. In addition, the surface morphology and compositions were examined with a scanning electron microscope equipped with an energy dispersive spectrometer, and microstructural characterizations were performed using a transmission electron microscope. The formation of isolated photosensitive Ag-Au nanospheroids with a FCC structure partially embedded in the SiO2 substrate was confirmed, which has a potential application in solid-state devices. (C) 2013 AIP Publishing LLC. |
| Rights: | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 114, 054308 (2013) and may be found at http://jap.aip.org/resource/1/japiau/v114/i5/p054308_s1 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/53290 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 柴山 環樹
|
