Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5420

Title:	Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes
Authors:	Satoh, H. Browse this author
	Sugawara, K. Browse this author
	Tanaka, K.³ Browse this author →KAKEN DB
Authors(alt):	田中, 啓司³
Issue Date:	15-Jan-2006
Publisher:	American Institute of Physics
Journal Title:	Journal of Applied Physics
Volume:	99
Start Page:	024306
Publisher DOI:	10.1063/1.2163010
Abstract:	Nanoscale amorphous marks have been produced in crystalline Ge2Sb2Te5 films using an atomic-force microscope (AFM) and a scanning-tunneling microscope (STM) through electrical phase changes. Voltage pulses with duration of 5–100 ns applied by metal probes of the AFM and the STM can produce, respectively, high-resistance regions and deformations, the smallest sizes being ~10 and ~100 nm in diameter. Raman-scattering spectra demonstrate that these marks are amorphous. The AFM mark can be erased by applying longer pulses. Formation processes of the marks are considered from electrothermal and thermodynamic aspects.
Rights:	Copyright © 2006 American Institute of Physics
Relation:	http://www.aip.org/
Type:	article
URI:	http://hdl.handle.net/2115/5420
Appears in Collections:	工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中啓司

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