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Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

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タイトル: Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope
著者: Kim, Young-ho 著作を一覧する
Zhao, Jianwei 著作を一覧する
Uosaki, Kohei 著作を一覧する
発行日: 2003年12月15日
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 94
号: 12
開始ページ: 7733
終了ページ: 7738
出版社 DOI: 10.1063/1.1627951
抄録: Nanosized patterns of tantalum oxide were fabricated on a tantalum substrate by applying a potential pulse utilizing current sensing atomic force microscopy (CSAFM). The dimensions of the dots were strongly dependent on the bias applied, scan rate, and potential pulse duration. By controlling these variables, the minimum size nanodots with full width at half maximum of 35 nm was achieved. Immediately after pattern formation, the electrical properties of the Ta oxide nanodots were measured using CSAFM. The charge transport at the CSAFM tip and the nanosized Ta oxide dot can be described by Poole–Frenkel type conduction. The relative dielectric constant of the nanosized Ta2O5 dots was calculated to be 17.8–24.3, showing that the quality of the oxide was high. In addition, by controlling the substrate bias applied, pulse duration, and tip scan speed, nanosized Ta oxide lines with the desired dimensions were prepared.
Rights: Copyright © 2003 American Institute of Physics
Relation (URI): http://www.aip.org/
資料タイプ: article
URI: http://hdl.handle.net/2115/5602
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 魚崎 浩平

 

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