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Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope

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Title: Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope
Authors: Zhao, Jianwei Browse this author
Uosaki, Kohei2 Browse this author →KAKEN DB
Authors(alt): 魚崎, 浩平2
Issue Date: 8-Sep-2003
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 83
Issue: 10
Start Page: 2034
End Page: 2036
Publisher DOI: 10.1063/1.1609237
Abstract: The dielectric properties of alkyl monolayers with various chain lengths [CH3(CH2)n–1- (n = 12, 14, 16, and 18)] covalently bonded to a hydrogen terminated n-type silicon (111) surface in a nanoscale region were evaluated using current sensing atomic force microscopy (AFM). A reliable electrical contact between the alkyl monolayers and the metal-coated AFM tip was achieved under slight stress. At a force less than 2 nN, current sharply increased as the bias was scanned over a critical value, showing that breakdown took place. The breakdown voltage linearly depended on the chain length of the alkyl monolayers and the dielectric strength of 2.0 GV/m was derived from the slope of this relation.
Rights: Copyright © 2003 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5701
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 魚崎 浩平

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