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Surface flatness of polycrystalline copper after argon ion etching followed by annealing

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Title: Surface flatness of polycrystalline copper after argon ion etching followed by annealing
Authors: Hino, T.1 Browse this author →KAKEN DB
Taguchi, T. Browse this author
Yamauchi, Y. Browse this author
Hirohata, Y. Browse this author
Nishikawa, M. Browse this author
Authors(alt): 日野, 友明1
Issue Date: 4-Nov-2004
Publisher: AVS Science & Technology of Materials Interfaces, and Processing
Journal Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 22
Issue: 6
Start Page: 2632
End Page: 2634
Publisher DOI: 10.1116/1.1814110
Abstract: Oblique injection of argon ions with energy of 1 keV was conducted for etching of polycrystalline copper. The surface became rough owing to the formation of blisters. The average diameter and height of blisters was approximately 150 and 20–30 nm, respectively. The polycrystalline copper irradiated by argon ions was annealed to rupture the blisters. The retained argon desorbed in the temperature range from 500 to 800 K. The height of blisters significantly reduced to 10–15 nm although the diameter and surface density of blisters roughly remained the same.
Type: article (author version)
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 日野 友明

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