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Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses

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Title: Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses
Authors: Hatta, E.1 Browse this author →KAKEN DB
Nagao, J. Browse this author
Mukasa, K. Browse this author
Authors(alt): 八田, 英嗣1
Issue Date: 1-Feb-1996
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 79
Issue: 3
Start Page: 1511
End Page: 1514
Publisher DOI: 10.1063/1.360993
Abstract: We have calculated tunneling conductance in metal–narrow-gap-semiconductor (NGS)–metal tunnel junctions. Flietner's two-band model is used to describe the dispersion relation within the energy gap in an isotropic NGS with different conduction- and valence-band edge effective masses. The results are compared with the tunneling conductance calculated by Kane's two-band model, which has been commonly used to describe the tunneling characteristics through the energy gap in semiconductors. These results propose that the tunneling conductance in the tunnel junctions in which a narrow gap semiconductor of largely different conduction- and valence-band effective masses is used as a tunneling barrier can exhibit quite a different behavior, especially in the region of the midgap, from the tunneling conductance described by Kane's two-band model.
Rights: Copyright © 1996 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5716
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 八田 英嗣

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