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Amorphous Ge under pressure

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Title: Amorphous Ge under pressure
Authors: Tanaka, Keiji1 Browse this author →KAKEN DB
Authors(alt): 田中, 啓司1
Issue Date: 15-Feb-1991
Publisher: American Physical Society
Journal Title: Physical Review B
Volume: 43
Issue: 5
Start Page: 4302
End Page: 4307
Publisher DOI: 10.1103/PhysRevB.43.4302
Abstract: Pressure effects in sputtered a-Ge and a-Ge:H films have been investigated at room temperature up to 100 kbar. X-ray-diffraction patterns, the bulk compression characteristics, and the optical-absorption spectra for a-Ge show the amorphous-to-crystalline transition at around 60 kbar. The phase transition can be accounted for thermodynamically using a free-energy diagram. The optical-absorption edge in the amorphous films shifts to higher energies with a rate of 1 meV/kbar, which is smaller than the coefficient in the crystalline phase. The origin of the difference can be ascribed to distinct structural modifications in ordered and disordered tetrahedral networks under hydrostatic compression.
Rights: Copyright © 1991 American Physical Society
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中 啓司

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