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Hole Doping of Tin Bromide and Lead Bromide Organic Inorganic Hybrid Semiconductors

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Title: Hole Doping of Tin Bromide and Lead Bromide Organic Inorganic Hybrid Semiconductors
Authors: Lorena, Giancarlo S. Browse this author
Hasegawa, Hiroyuki Browse this author →KAKEN DB
Takahashi, Yukihiro Browse this author →KAKEN DB
Harada, Jun Browse this author →KAKEN DB
Inabe, Tamotsu Browse this author →KAKEN DB
Issue Date: 5-Oct-2014
Publisher: Chemical Society of Japan
Journal Title: Chemistry Letters
Volume: 43
Issue: 10
Start Page: 1535
End Page: 1537
Publisher DOI: 10.1246/cl.140536
Abstract: Isomorphous layered A(2)MBr(4) perovskite (A = C6H5C2-H4NH3+ and C6H9C2H4NH3+; M = Sn and Pb) semiconductors with energy gaps of 2.5-2.9 eV were prepared. Though the as-grown A(2)MBr(4) perovskites displayed lower conductivities than the iodide analogs, they were found to be spontaneously doped. Furthermore, we demonstrated that hole doping is effective in wide-ranging A(2)MX(4) materials that have sizable valence and conduction bands with tunable band gaps, showing potential as soluble semiconductors.
Type: article (author version)
Appears in Collections:理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 稲辺 保

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