Hole Doping of Tin Bromide and Lead Bromide Organic Inorganic Hybrid Semiconductors


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/57496

Title:	Hole Doping of Tin Bromide and Lead Bromide Organic Inorganic Hybrid Semiconductors
Authors:	Lorena, Giancarlo S. Browse this author
	Hasegawa, Hiroyuki Browse this author →KAKEN DB
	Takahashi, Yukihiro Browse this author →KAKEN DB
	Harada, Jun Browse this author →KAKEN DB
	Inabe, Tamotsu Browse this author →KAKEN DB
Issue Date:	5-Oct-2014
Publisher:	Chemical Society of Japan
Journal Title:	Chemistry Letters
Volume:	43
Issue:	10
Start Page:	1535
End Page:	1537
Publisher DOI:	10.1246/cl.140536
Abstract:	Isomorphous layered A(2)MBr(4) perovskite (A = C6H5C2-H4NH3+ and C6H9C2H4NH3+; M = Sn and Pb) semiconductors with energy gaps of 2.5-2.9 eV were prepared. Though the as-grown A(2)MBr(4) perovskites displayed lower conductivities than the iodide analogs, they were found to be spontaneously doped. Furthermore, we demonstrated that hole doping is effective in wide-ranging A(2)MX(4) materials that have sizable valence and conduction bands with tunable band gaps, showing potential as soluble semiconductors.
Type:	article (author version)
URI:	http://hdl.handle.net/2115/57496
Appears in Collections:	理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 稲辺保

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