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Filament formation and erasure in molybdenum oxide during resistive switching cycles

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Title: Filament formation and erasure in molybdenum oxide during resistive switching cycles
Authors: Kudo, Masaki Browse this author
Arita, Masashi Browse this author →KAKEN DB
Ohno, Yuuki Browse this author
Takahashi, Yasuo Browse this author →KAKEN DB
Issue Date: 27-Oct-2014
Publisher: American Instutute of Physics
Journal Title: Applied Physics Letters
Volume: 105
Issue: 17
Start Page: 173504
Publisher DOI: 10.1063/1.4898773
Abstract: In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 173504(2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/105/17/10.1063/1.4898773
Type: article
URI: http://hdl.handle.net/2115/57674
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 有田 正志

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