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Filament formation and erasure in molybdenum oxide during resistive switching cycles
| Title: | Filament formation and erasure in molybdenum oxide during resistive switching cycles |
| Authors: | Kudo, Masaki Browse this author | | Arita, Masashi Browse this author →KAKEN DB | | Ohno, Yuuki Browse this author | | Takahashi, Yasuo Browse this author →KAKEN DB |
| Issue Date: | 27-Oct-2014 |
| Publisher: | American Instutute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 105 |
| Issue: | 17 |
| Start Page: | 173504 |
| Publisher DOI: | 10.1063/1.4898773 |
| Abstract: | In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change. |
| Rights: | Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 173504(2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/105/17/10.1063/1.4898773 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/57674 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 有田 正志
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