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Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system
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Title: | Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system |
Authors: | Kiba, Takayuki Browse this author →KAKEN DB | Tanaka, Toru Browse this author | Tamura, Yosuke Browse this author | Higo, Akio Browse this author | Thomas, Cedric Browse this author | Samukawa, Seiji Browse this author | Murayama, Akihiro Browse this author →KAKEN DB |
Issue Date: | 8-Oct-2014 |
Publisher: | American Institute of Physics |
Journal Title: | AIP Advances |
Volume: | 4 |
Issue: | 10 |
Start Page: | 107112 |
Publisher DOI: | 10.1063/1.4897958 |
Abstract: | We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
Rights: | http://creativecommons.org/licenses/by-nc-sa/2.1/jp/ |
Type: | article |
URI: | http://hdl.handle.net/2115/57757 |
Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 木場 隆之
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