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Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

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Title: Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system
Authors: Kiba, Takayuki Browse this author →KAKEN DB
Tanaka, Toru Browse this author
Tamura, Yosuke Browse this author
Higo, Akio Browse this author
Thomas, Cedric Browse this author
Samukawa, Seiji Browse this author
Murayama, Akihiro Browse this author →KAKEN DB
Issue Date: 8-Oct-2014
Publisher: American Institute of Physics
Journal Title: AIP Advances
Volume: 4
Issue: 10
Start Page: 107112
Publisher DOI: 10.1063/1.4897958
Abstract: We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Rights: http://creativecommons.org/licenses/by-nc-sa/2.1/jp/
Type: article
URI: http://hdl.handle.net/2115/57757
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 木場 隆之

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