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In situ observation of anodic dissolution process of n-GaAs in HCl solution by electrochemical atomic force microscope
| Title: | In situ observation of anodic dissolution process of n-GaAs in HCl solution by electrochemical atomic force microscope |
| Authors: | Koinuma, Michio Browse this author | | Uosaki, Kohei2 Browse this author →KAKEN DB |
| Authors(alt): | 魚崎, 浩平2 |
| Issue Date: | May-1994 |
| Publisher: | American Vacuum Society |
| Journal Title: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| Volume: | 12 |
| Issue: | 3 |
| Start Page: | 1543 |
| End Page: | 1546 |
| Publisher DOI: | 10.1116/1.587282 |
| Abstract: | Anodic dissolution of a GaAs(100) face was investigated by in situ electrochemical atomic force microscope (AFM). While no surface structure change was observed at –0.6 V (vs Ag/AgCl) where no current flowed, dome structure on surface was removed, and flat surface was obtained after keeping the potential at 0 V (vs Ag/AgCl) where anodic current of ~150 µA cm–2 flowed. An atomically resolved AFM image was obtained in the flat region and shows the surface is dominated by a (111) face after the anodic dissolution. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5778 |
| Appears in Collections: | 理学院・理学研究院 (Graduate School of Science / Faculty of Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 魚崎 浩平
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